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| VHB1-12T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB1-12T is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. FEATURES: * Class C Operation * PG = 10 dB at 1.0 W/175 MHz * OmnigoldTM Metalization System PACKAGE STYLE TO-39 B OA 45 C OD E MAXIMUM RATINGS IC VCBO VCEO VCER VEBO PDISS TJ TSTG JC 400 mA (MAX) 40 V 20 V 40 V DIM F G H MINIMUM inches / mm MAXIMUM inches / mm 2.0 V 3.5 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 20 C/W A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 .500 / 12.700 .020 / 0.508 ORDER CODE: ASI10711 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICEO hFE VCE(SAT) COB PG C TC = 25 C NONETEST CONDITIONS IC = 5.0 mA IC = 5.0 mA IE = 100 A VCE = 12 V VCE = 5.0 V IC = 100 mA VCB = 12.5 V VCE = 12.5 V POUT = 1.0 W IC = 100 mA IB = 20 mA f = 1.0 MHz f = 175 MHz RBE = 10 MINIMUM TYPICAL MAXIMUM 20 40 2.0 0.2 10 200 0.5 4.0 10 60 UNITS V V V mA --Vdc pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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